EML Based on Identical Epitaxial Layer, Side-Wall Grating and HSQ Planarization

We present an electroabsorption modulated laser based on identical epitaxial scheme, side-wall grating, on- chip microwave probe interface, and a new low-permittivity planarization method. The modulation speed is significantly increased by reducing the electrode capacitance planarizing with 5- $\mu \text{m}$ -thick HSQ layer. Furthermore, implementing direct ground-signal-ground interface provides straightforward interconnection that obviates need for external circuit bonding wires. device operates at 1565 nm wavelength stable single-mode lasing, no mode-hopping, side mode suppression ratio above 35 dB. An extinction of 19.5 dB was recorded maximum modulator bias −4 V. electrical to optical power response signal at–3-dBo demonstrated 19 GHz bandwidth 7 dB, which supports error-free data transmission up 27 Gbit/s.